Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Edward J. Nowak0
Jed H. Rankin0
Paul D. Agnello0
Rama Divakaruni0
Arne W. Ballantine0
Erin C. Jones0
James W. Adkisson0
Date of Patent
April 22, 2008
Patent Application Number
11495518
Date Filed
July 31, 2006
Patent Primary Examiner
Patent abstract
A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance.
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