Patent attributes
To provide a semiconductor device with high performance and reliability, in which peeling off an interconnection layer caused due to peeling off of a resin film at a land part is suppressed and thus electrical break down is prevented, and an efficient method for manufacturing the semiconductor device. The semiconductor device includes a semiconductor substrate (e.g., a silicon wafer 10); an insulating film 12 formed on the semiconductor substrate 10; a conductive layer 20 formed on the insulating film 12, the conductive layer 20 formed of an interconnection part 22 and a land part 24 which connects the interconnection part 22 to an external terminal 40; and a resin film 30 covering the conductive layer 20, wherein the resin film 30 is in contact with the insulating film 12 at least at a part of the land part 24 by passing through the conductive layer 20.
