Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 6, 2008
Patent Application Number
11392493
Date Filed
March 30, 2006
Patent Primary Examiner
Patent abstract
A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to form an Au alloy in the n-side electrode. The presence of the Au alloy film improves the adherence between the n-side electrode and the compound semiconductor layer to improve an injection current vs. applied voltage characteristic.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
