US Patent 7368750 Semiconductor light-receiving device
Patent 7368750 was granted and assigned to Fujitsu on May, 2008 by the United States Patent and Trademark Office.
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A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrate and has a lower impurity concentration than the semiconductor layer of the first conduction type; a light absorption layer that is formed on the buffer layer and generates carriers in accordance with incident light; a semiconductor layer of a second conduction type that is formed on the light absorption layer; and a semiconductor intermediate layer that is interposed between the buffer layer and the light absorption layer, and has a forbidden bandwidth within a range lying between the forbidden bandwidth of the buffer layer and the forbidden bandwidth of the light absorption layer.
US Patent 07368750 Semiconductor light-receiving device US Patent 7368750 Semiconductor light-receiving device
US Patent 07368750 Semiconductor light-receiving device
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