Patent attributes
A transconductance circuit, comprising: first and second field effect transistors, each having a drain, a source and a gate; wherein the first transistor is in a first current flow path between first and second nodes of the circuit, and is biased so as to operate in a saturation region of its transfer characteristic; the second field effect transistor is in a second current flow path between the first and second nodes of the circuit and is biased so as to operate in a linear region of its transfer characteristic; the gate of the first and second transistors are connected to receive an input signal; and wherein the second transistor is further in series with a voltage modulator adapted to reduce the drain-source voltage occurring across the second transistor in response to increased current flow in the second transistor.
