Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Brian Wagner0
David Kahler0
Mike Aumer0
Narsingh Bahadur Singh0
Andre Berghmans0
Darren Thomson0
David J. Knuteson0
Date of Patent
May 13, 2008
0Patent Application Number
114846910
Date Filed
July 12, 2006
0Patent Primary Examiner
Patent abstract
A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
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