US Patent 7371507 Methods for fabricating semiconductor devices

Methods for fabricating semiconductor devices are disclosed. A disclosed method comprises: forming a conductive layer, depositing a interlayer dielectric layer, forming an anti-reflective coating layer on the interlayer dielectric layer, forming a photoresist pattern on the anti-reflection layer, dry-etching the anti-reflective coating layer and the interlayer dielectric layer using the photoresist pattern as a mask and performing an Ar and fluoric plasma treatment to remove a residual layer deposited during the etching of the ARC layer and the ILD.