Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Katsuhiko Tanaka0
Date of Patent
May 13, 2008
0Patent Application Number
112115310
Date Filed
August 26, 2005
0Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device is achieved by forming an interlayer insulating film on a conductive portion formed in a semiconductor substrate which is placed in a chamber. A contact hole is formed to pass through the interlayer insulating film to the conductive portion, and a barrier metal layer is formed to cover a bottom portion of side wall portion of the contact hole. A tungsten layer is formed from a material gas containing fluorine and the fluorine is removed from the tungsten layer through a post purge process. The tungsten layer is formed to fill the contact hole in which the barrier metal layer has been formed.
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