Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 20, 2008
0Patent Application Number
113559850
Date Filed
February 17, 2006
0Patent Primary Examiner
Patent abstract
A GaN substrate 1, a group III nitride semiconductor substrate, is provided with an OF portion 2 for the periphery thereof. The bevel 7 on the periphery of the nitric polarity face 5 side of the GaN substrate 1 is provided throughout the entire periphery of the GaN substrate 1 including the OF portion 2, wherein the beveling angle θ2 of the bevel 7 is given a value in the range over 30° to 60° inclusive.
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