Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 20, 2008
Patent Application Number
10713219
Date Filed
November 17, 2003
Patent Primary Examiner
Patent abstract
When a gettering sink is removed by using alkaline solution of etchant having a high selectivity to the gettering sink and a barrier film functioning as an etching stopper, residue of gettering is left. However, according to the present invention, a semiconductor film that serves as a gettering sink contains nitrogen at concentration of 1×1018 atoms/cm3 or lower, oxygen at concentration of 8×1019 atoms/cm3 or lower, and noble gas at concentration is of 1×1020 atoms/cm3 or higher. In order to achieve the above-described impurity concentrations, a concentration of oxygen that is an impurity element in a chamber is reduced by using a flammable gas for heating and exhausting oxygen.
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