Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Edward J. Nowak0
Richard Q. Williams0
Date of Patent
May 20, 2008
0Patent Application Number
111619110
Date Filed
August 22, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor resistor, method of making the resistor and method of making an IC including resistors. Buried wells are formed in the silicon substrate of a silicon on insulator (SOI) wafer. At least one trench is formed in the buried wells. Resistors are formed along the sidewalls of the trench and, where multiple trenches form pillars, in the pillars between the trenches by doping the sidewalls with an angled implant. Resistor contacts are formed to the buried well at opposite ends of the trenches and pillars, if any.
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