US Patent 7375007 Method of manufacturing a semiconductor device

To provide a penetration electrode having high quality. A method of manufacturing a semiconductor device includes the following steps: (a) forming a concave part from a first face of a semiconductor substrate in which an integrated circuit is formed; (b) providing a resin layer at least on the bottom face of the concave part; (c) forming a conductive part to an inner side of the resin layer of the concave part; (d) disposing the resin layer from a second face opposite to the first face of the semiconductor substrate by wet etching; and (e) exposing the conductive part from the second face of the semiconductor substrate.