Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
May 20, 2008
Patent Application Number
11338579
Date Filed
January 23, 2006
Patent Primary Examiner
Patent abstract
A method for fabricating a semiconductor a semiconductor device having a stacked-gate structure. A polysilicon layer is formed overlying a substrate, which is insulated from the substrate by a dielectric layer. A metal-flash layer is formed overlying the polysilicon layer, and then a tungsten nitride layer is formed overlying the titanium layer. The tungsten nitride layer is annealed using nitrogen and hydrogen gases. A tungsten layer and a cap layer are successively formed overlying the tungsten nitride layer.
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