Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Akio Kaneko0
Kazuhiro Eguchi0
Motoyuki Sato0
Seiji Inumiya0
Katsuyuki Sekine0
Date of Patent
May 20, 2008
Patent Application Number
10738049
Date Filed
December 18, 2003
Patent Primary Examiner
Patent abstract
A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO2, or a mixture of a tetravalent metal oxide and SiON and which containing B when it is in an nMOS structure on the semiconductor substrate or containing at least one of P and As when it is in a pMOS structure on the semiconductor substrate, and a gate electrode made of a metal having a work function of 4 eV to 5.5 eV.
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