Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tsuyoshi Tanaka0
Yasuhiro Uemoto0
Daisuke Ueda0
Manabu Yanagihara0
Date of Patent
May 20, 2008
0Patent Application Number
112718330
Date Filed
November 14, 2005
0Patent Primary Examiner
Patent abstract
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.
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