US Patent 7378303 Method of fabricating thin film transistor

Patent 7378303 was granted and assigned to AU Optronics on May, 2008 by the United States Patent and Trademark Office.

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Patent Inventor Names

Chih-Hung Shih0

Feng-Yuan Gan0

Han-Tu Lin0

Ta-Wen Liao0

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Patent abstract

A method for fabricating a thin film transistor is provided. A conductive layer is formed on a substrate. A patterned mask is formed on the conductive layer to cover a predetermined thin film transistor (TFT) area, and at least one portion of the conductive layer exposed by the patterned mask are removed. A laser is applied to form a laser hole in the patterned mask to expose a portion of the conductive layer and the laser hole substantially corresponds to a channel region of the predetermined TFT area. The exposed conductive layer is etched to form source and drain electrodes on opposite sides of the channel region.

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Official Website

https://pdfpiw.uspto.gov/.piw?Docid=07378303

Edits on 18 May, 2023

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