Patent attributes
Disclosed is a method for manufacturing a semiconductor device, comprising forming an insulating film above a semiconductor substrate having an element formed thereon, forming an anti-reflection layer that is impermeable to hydrogen on the insulating film, the anti-reflection layer comprising a layer formed of at least one material selected from the group consisting of silicon nitride, silicon oxynitride, chromium oxide, CrOxFy, CrAlxOy, AlSixOy, ZrSixOy, silicon oxycarbide, carbon, chromium nitride, titanium nitride, tantalum nitride, aluminum nitride, TiAlxNy, TaAlxNy, TiSixNy, AlSixNy (where x and y denote the component ratio), and silicon carbide, forming a resist pattern on the anti-reflection layer, forming a hole in the insulating film with the resist pattern used as a mask, burying a conductive material in the hole to form a plug, removing the resist pattern, and forming a ferroelectric capacitor above the anti-reflection layer.
