US Patent 7382014 Semiconductor device with capacitor suppressing leak current

A semiconductor device with a capacitor includes a lower electrode, a dielectric and an upper electrode on the dielectric layer. The dielectric layer including more than one polycrystalline tantalum oxide layer and more than one separation layer, wherein the polycrystalline tantalum oxide layers and the separation layers are alternately stacked, while one of the polycrystalline tantalum oxide layers is a lowermost layer among the stacked layers.