US Patent 7382020 Semiconductor integrated circuit

Patent 7382020 was granted and assigned to National Institute of Advanced Industrial Science and Technology on June, 2008 by the United States Patent and Trademark Office.

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Current Assignee

National Institute of Advanced Industrial Science and Technology

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7382020

Date of Patent

June 3, 2008

Patent Application Number

11067699

Date Filed

March 1, 2005

Patent Primary Examiner

‌

Nathan W Ha

Patent abstract

Upstanding thin-film channel regions 5 having different heights are formed between source regions 7 and drain regions 8 of MOS transistors, respectively.

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