Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 3, 2008
Patent Application Number
11356125
Date Filed
February 17, 2006
Patent Primary Examiner
Patent abstract
A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor and having a pattern surrounding and set apart from the outer periphery of the anode. Because there are no edges at the anode and cathode interface, leakage current is minimized.
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