Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wensheng Wang0
Date of Patent
June 10, 2008
0Patent Application Number
114966390
Date Filed
August 1, 2006
0Patent Primary Examiner
Patent abstract
A ferroelectric capacitor having a bottom electrode (9a), a ferroelectric film (10a) and a top electrode (11a) is formed above a semiconductor substrate (1). The ferroelectric film (10a) is constituted of CSPZT with 0.1-5 mol % of La and 0.1-5 mol % of Nb.
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