Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
June 10, 2008
Patent Application Number
11430138
Date Filed
May 9, 2006
Patent Primary Examiner
Patent abstract
A magnetic memory element includes a sense structure, a tunnel barrier adjacent the sense structure, and a synthetic antiferromagnet (SAF) adjacent the tunnel barrier on a side opposite the sense structure. The SAF includes an antiferromagnetic structure adjacent a ferromagnetic seed layer. The ferromagnetic seed layer provides a texture so that the antiferromagnetic structure deposited on the ferromagnetic seed layer has reduced pinning field dispersion.
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