US Patent 7387923 ISFET using PbTiO
Patent 7387923 was granted and assigned to National Yunlin University of Science and Technology on June, 2008 by the United States Patent and Trademark Office.
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A PbTiO3/SiO2-gated ISFET device comprising a PbTiO3 thin film as H+-sensing film, and a method of forming the same. The PbTiO3 thin film is formed through a sol-gel process which offers many advantages, such as, low processing temperature, easy control of the composition of the film and easy coating over a large substrate. The PbTiO3/SiO2 gated ISFET device of the present invention is highly sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.
US Patent 07387923 ISFET using PbTiO US Patent 7387923 ISFET using PbTiO
US Patent 07387923 ISFET using PbTiO
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