US Patent 7387937 Thermal dissipation structures for FinFETs

A fin-type field effect transistor has an insulator layer above a substrate and a fin extending above the insulator layer. The fin has a channel region, and source and drain regions. A gate conductor is positioned over the channel region. The insulator layer includes a heat dissipating structural feature adjacent the fin, and a portion of the gate conductor contacts the heat dissipating structural feature. The heat dissipating structural feature can comprise a recess within the insulator layer or a thermal conductor extending through the insulator layer.