US Patent 7390702 Method for manufacturing semiconductor device
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Patent Inventor Names
Toshiyuki Nakamura0
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Patent abstract
Laser is applied onto part on an SOS substrate using a sapphire layer to form an identifying mark. The sapphire layer on the surface of the SOS substrate, which has been exposed upon laser application, is covered with an insulating film formed by heat treatment at 700° C. or less, and thereafter a device is formed using heat treatment at a temperature higher than 700° C.
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US Patent 07390702 Method for manufacturing semiconductor device US Patent 7390702 Method for manufacturing semiconductor device
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Patent Number
073907020
Patent Number
73907020
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Patent Jurisdiction
Patent Number
073907020
Date of Patent
June 24, 2008
0Patent Application Number
111183610
Date Filed
May 2, 2005
0Official Website
Patent Primary Examiner
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US Patent 07390702 Method for manufacturing semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
07390702
Date of patent
June 24, 2008
Patent application number
11118361
Date Filed
May 2, 2005
Patent primary examiner
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