Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yukio Takigawa0
Tamotsu Yamamoto0
Tsutomu Hosoda0
Yoshiyuki Okura0
Takahiro Kono0
Date of Patent
June 24, 2008
Patent Application Number
10816958
Date Filed
April 5, 2004
Patent Primary Examiner
Patent abstract
A method for fabricating a semiconductor device comprises the steps of: forming interconnection grooves 38 in an inter-layer insulation film 34; forming an interconnection layer 44 of Cu as the main material in the interconnection grooves 38; and concurrently injecting nitrogen gas and water to the surface of the interconnection layer 44 buried in the interconnection groove 38.
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