Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshikazu Onishi0
Kazutoshi Onozawa0
Tetsuzo Ueda0
Date of Patent
June 24, 2008
0Patent Application Number
114100480
Date Filed
April 25, 2006
0Patent Primary Examiner
Patent abstract
A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.
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