US Patent 7396410 Featuring forming methods to reduce stacking fault nucleation sites

Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. The epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes features therein.