Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 8, 2008
Patent Application Number
11384297
Date Filed
March 21, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.