Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sukesh Sandhu0
Gurtej S. Sandhu0
Date of Patent
July 8, 2008
0Patent Application Number
108999130
Date Filed
July 27, 2004
0Patent Primary Examiner
Patent abstract
A first dielectric layer is formed over a substrate. A single layer first conductive layer that acts as a floating gate is formed over the first dielectric layer. A trough is formed in the first conductive layer to increase the capacitive coupling of the floating gate with a control gate. An intergate dielectric layer is formed over the floating gate layer. A second conductive layer is formed over the second dielectric layer to act as a control gate.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
