US Patent 7402887 Semiconductor device having fuse area surrounded by protection means

A semiconductor device has a semiconductor substrate, first and second insulating layers, a fuse, a diffusion layer and a conductive pattern. The first insulating layer is selectively formed on a surface of the semiconductor substrate. The fuse is formed on the first insulating layer. The diffusion layer is formed on the surface of the semiconductor substrate. The diffusion layer is applied to a fixed potential. The second insulating layer is formed on the fuse. The conductive pattern is formed on the second insulating layer. The conductive pattern surrounds the fuse. Further, the conductive pattern is electrically connected to the diffusion layer.