Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chan-ho Kim0
Date of Patent
July 22, 2008
0Patent Application Number
114874230
Date Filed
July 17, 2006
0Patent Primary Examiner
Patent abstract
A flash memory device comprises first and second mat structures connected to respective first and second high voltage lines, and a switch circuit connected between the first and second high voltage lines. The switch circuit supplies a program voltage from the first high voltage line to the second high voltage line during a first program operation of the flash memory device, and then supplies a voltage from the second high voltage line to the first high voltage line during a second program operation.
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