Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
July 29, 2008
Patent Application Number
11435079
Date Filed
May 15, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow, is disclosed.
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