US Patent 7405125 Tunnel oxynitride in flash memories
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Patent Inventor Names
Szu-Yu Wang0
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Patent abstract
Methods for forming a tunnel oxide structure device and methods for forming the structure are described. A structure comprising nitrogen is formed on a semiconductor substrate. The structure is oxidized. Nitrogen of the oxide structure is redistributed to form a region of concentrated nitrogen. Oxidizing the structure and redistributing the nitrogen is performed via radical oxidation. Nitrogen is added to the oxide structure. The region of concentrated nitrogen helps to regulate the depth of the added nitrogen.
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US Patent 07405125 Tunnel oxynitride in flash memories US Patent 7405125 Tunnel oxynitride in flash memories
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Patent Number
074051250
Patent Number
74051250
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Patent Jurisdiction
Patent Number
074051250
Date of Patent
July 29, 2008
0Patent Application Number
108580400
Date Filed
June 1, 2004
0Official Website
Patent Primary Examiner
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US Patent 07405125 Tunnel oxynitride in flash memories
Infobox
Is a
Patent jurisdiction
Patent number
07405125
Date of patent
July 29, 2008
Patent application number
10858040
Date Filed
June 1, 2004
Patent primary examiner
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