Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 29, 2008
Patent Application Number
11420900
Date Filed
May 30, 2006
Patent Primary Examiner
Patent abstract
A method for forming a semiconductor device is described. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.
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