US Patent 7405160 Method of making semiconductor device
Patent 7405160 was granted and assigned to Tokyo Electron on July, 2008 by the United States Patent and Trademark Office.
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Patent abstract
A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.
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Patent Jurisdiction
Patent Number
74051600
Date of Patent
July 29, 2008
0Patent Application Number
112996900
Date Filed
December 13, 2005
0Patent Primary Examiner
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US Patent 07405160 Method of making semiconductor device US Patent 7405160 Method of making semiconductor device
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Patent Number
0740516000
Patent Number
740516000
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
074051600
Date of Patent
July 29, 2008
0Patent Application Number
112996900
Date Filed
December 13, 2005
0Official Website
Patent Primary Examiner
Edits on 22 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
074051600
Date of Patent
July 29, 2008
0Patent Application Number
112996900
Date Filed
December 13, 2005
0Official Website
Patent Primary Examiner
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US Patent 07405160 Method of making semiconductor device
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07405160
Date of patent
July 29, 2008
Patent application number
11299690
Date Filed
December 13, 2005
Patent primary examiner
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