Patent attributes
The present invention relates to a method for forming a protective cap for a device. Typically, the device would be formed on a silicon wafer and is, for example, a MEMS device. The method involves the steps of locating thermosplastic material between a first wafer including a first recess and a second wafer including two second recesses. The first and second wafers are positioned relative to one another so that the first recess is in register with the two second recesses and the thermoplastic material is heated. The first and second wafers are pressed together so that heated thermosplastic material enters the first and second recesses and thereby forms the cap. A method for forming a plurality of protective caps for devices is also provided.
