Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kenji Nishiyama0
Michio Kadota0
Takeshi Nakao0
Date of Patent
August 12, 2008
Patent Application Number
11674928
Date Filed
February 14, 2007
Patent Primary Examiner
Patent abstract
In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
