Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Horng-Huei Tseng0
Date of Patent
August 19, 2008
Patent Application Number
11357697
Date Filed
February 17, 2006
Patent Primary Examiner
Patent abstract
A damascene structure and process at semiconductor substrate level. A pre-metal dielectric layer is provided on a semiconductor substrate with an opening exposing a contact region on the substrate. A buffer metal layer is provided on the exposed contact region, and a barrier layer is provided on the interior of the opening. A conductor is provided on the buffer metal layer, substantially filling the opening to electrically connect to the contact region.
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