Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroomi Tsutae0
Date of Patent
September 2, 2008
0Patent Application Number
112218320
Date Filed
September 9, 2005
0Patent Primary Examiner
Patent abstract
A method for manufacturing a semiconductor device, in which a substrate is disposed in a chamber and a fluorine-containing silicon oxide film is formed on the substrate using a plasma CVD process. The fluorine-containing silicon oxide film is formed such that the release of fluorine from this silicon oxide layer is suppressed. According to this semiconductor device manufacturing method, a stable semiconductor device can be provided such that the device includes a fluorine-containing silicon oxide film (FSG film) at which the release of fluorine is suppressed, and thus peeling does not occur.
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