US Patent 7420258 Semiconductor device having trench structures and method
All edits
Edits on 16 Sep, 2023
Golden AI
Edits made to:
Infobox (+2 properties)
Infobox
Patent Inventor Names
Gordon M. Grivna0
Peter J. Zdebel0
Edits on 14 Sep, 2023
Golden AI
Edits made to:
Article (+272 characters)
Article
Patent abstract
In one embodiment, a pair of sidewall passivated trench contacts is formed in a substrate to provide electrical contact to a sub-surface feature. A doped region is diffused between the pair of sidewall passivated trenches to provide low resistance contacts.
Edits on 21 Jul, 2023
Golden AI
Edits made to:
Infobox (-1 properties)
Infobox
Official Website
Edits on 24 May, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 07420258 Semiconductor device having trench structures and method US Patent 7420258 Semiconductor device having trench structures and method
Infobox
Patent Number
074202580
Patent Number
74202580
Edits on 29 Mar, 2023
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
074202580
Date of Patent
September 2, 2008
0Patent Application Number
117696500
Date Filed
June 27, 2007
0Official Website
Patent Primary Examiner
Edits on 14 Jun, 2022
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Website URL
Edits on 1 Dec, 2021
Golden AI
Edits made to:
Infobox (+7 properties)
US Patent 07420258 Semiconductor device having trench structures and method
Infobox
Is a
Patent jurisdiction
Patent number
07420258
Date of patent
September 2, 2008
Patent application number
11769650
Date Filed
June 27, 2007
Patent primary examiner
Find more entities like US Patent 7420258 Semiconductor device having trench structures and method
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
