Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mitsuhiro Noguchi0
Seiichi Mori0
Date of Patent
September 2, 2008
0Patent Application Number
113739820
Date Filed
March 14, 2006
0Patent Primary Examiner
Patent abstract
A first insulation film, a first conductor film, and a cap are sequentially formed on a semiconductor substrate. The first insulation film, the first conductor film, and the cap, and the substrate are etched in the same pattern. A second insulation film is placed in that etched pattern. The cap is removed. A second conductor film is formed on the side face of the second insulation film.
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