Patent attributes
The difficulty of miniaturization of large-scale integrated circuits in electric devices based on the conventional techniques involving three-dimensional device structures or the introduction of novel materials is solved. Wires 2 and 3 are disposed to intersect one another in midair in a matrix. The ends of the wires 2 and 3 in midair are designed to be in direct contact with the insides of a package which contains a semiconductor device so that electrical connection and/or physical support can be acquired. Cross point 1 where wires 2 and 3 are in contact with each other is a region which has current switching function similar to the function of a channel of a common MOSFET. Cross point 1 is a region where base wire 2 functioning as a substrate and gate electrode wire 3 functioning as a control electrode (gate electrode) intersect in contact with one another, or a region where base wire 2 and a lead wire 4 overlap. The diameter and length of the wires as well as the distance therebetween can be designed as desired based on desired device specifications. The semiconductor device is insulated by gas (which is sealed with resin e.g. as the case may be) or vacuum except for an isolation region formed in base wire 2.
