US Patent 7423301 Semiconductor device including fuse elements and bonding pad

Patent 7423301 was granted and assigned to Renesas Technology Corp on September, 2008 by the United States Patent and Trademark Office.

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Patent Inventor Names

Junko Izumitani0

Noriaki Fujiki0

Takashi Yamashita0

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Patent abstract

A semiconductor device includes a lower-layer substrate, a fuse above the lower-layer substrate and blown by radiation with light, a silicon oxide film on the fuse and on an exposed portion of the surface of the lower-layer substrate, and a silicon nitride film on the silicon oxide film. The portion of the silicon oxide film on the surface of the lower-layer substrate is thicker than the fuse, and the silicon oxide film has an opening opposite the fuse.

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Official Website

https://pdfpiw.uspto.gov/.piw?Docid=074233010

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