Patent attributes
A method of manufacturing a semiconductor substrate and semiconductor device is disclosed and comprises forming a first monocrystalline semiconductor layer on a semiconductor base material, forming a second monocrystalline semiconductor layer covering the first monocrystalline semiconductor layer, and forming a support hole exposing the semiconductor base. A support layer is formed on the active surface of the semiconductor base material to fill the support hole and covers the second polycrystalline semiconductor layer. A cavity is formed between the second monocrystalline semiconductor layer and the semiconductor base material by selectively etching the first monocrystalline semiconductor layer through the opening surface. A buried insulating layer is formed in the cavity. A planarizing layer is formed on the semiconductor base material and planarized using the second polycrystalline semiconductor layer as an etch stop layer. The second polycrystalline semiconductor layer and the first polycrystalline semiconductor layer are removed.
