US Patent 7427549 Method of separating a structure in a semiconductor device

Removing a portion of a structure in a semiconductor device to separate the structure. The structure has two portions of different heights. In one example, the structure is removed by forming a spacer over the lower portion adjacent to the sidewall of the higher portion. A second material is then formed on the structure outside of the spacer. The spacer is removed and the portion under the spacer is then removed to separate the structure at that location. In one embodiment, separate channel regions are implemented in the separated structures. In other embodiments, separate gate structures are implemented in the separated structures.