Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 30, 2008
Patent Application Number
11378087
Date Filed
March 17, 2006
Patent Primary Examiner
Patent abstract
a Schottky diode having a semiconductor region is formed as follows. A plurality of charge control electrodes are formed in the semiconductor region so as to influence an electric field in the semiconductor region, wherein at least two of the charge control electrodes are adapted to be biased differently from one another. The semiconductor region is overlaid with a metal layer to thereby form a Schottky barrier therebetween.
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