US Patent 7429524 Transistor design self-aligned to contact

The present invention provides a method of manufacturing a transistor device, a transistor device, and a method for manufacturing an integrated circuit. In one aspect, the method of manufacturing a transistor device includes providing a gate structure (140) over a substrate (110). An insulating layer (310) is formed over the gate structure (140), and openings (710) to the substrate (110) are formed therein, thereby removing a portion of the gate structure (140). The openings (710) are filled with a conductor (1410), thereby forming an interconnect (1510).