Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Akira Nishiyama0
Masato Koyama0
Reika Ichihara0
Yoshinori Tsuchiya0
Date of Patent
September 30, 2008
Patent Application Number
11235246
Date Filed
September 27, 2005
Patent Primary Examiner
Patent abstract
There is disclosed a semiconductor device comprising a P-channel MIS transistor which includes an N-type semiconductor layer, a first gate insulating layer formed on the N-type semiconductor layer and containing a carbon compound of a metal, and an N-channel MIS transistor which includes a P-type semiconductor layer, a second gate insulating layer formed on the P-type semiconductor layer, and a second gate electrode formed on the second gate insulating layer.
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