Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jiutao Li0
Ralph Kauffman0
Richard A. Mauritzson0
Date of Patent
October 7, 2008
0Patent Application Number
112149310
Date Filed
August 31, 2005
0Patent Primary Examiner
Patent abstract
Methods of forming an improved shallow trench isolation (STI) region are disclosed. Several exemplary techniques are proposed for treating STI sidewalls to improve the silicon (Si) surface at the atomic level. Each of the exemplary methods creates a smooth STI sidewall surface, prior to performing oxidation, by reconstructing silicon atoms at the surface. The suggested STI region can be used in imager pixel cells or memory device applications.
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